Weak antilocalization and spin precession in quantum wells
Identifieur interne : 001E28 ( France/Analysis ); précédent : 001E27; suivant : 001E29Weak antilocalization and spin precession in quantum wells
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Abstract
The results of magnetoconductivity measurements in GaxIn1-xAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)×1012 cm-2 ] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in A3B5 crystals and two-dimensional structures. © 1996 The American Physical Society.
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Skierbiszewski</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Zduniak, A" uniqKey="Zduniak A">A. Zduniak</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. 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Bataillon, 34095 Montpellier-Cedex 05, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Bertho, D" uniqKey="Bertho D">D. Bertho</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Kobbi, F" uniqKey="Kobbi F">F. Kobbi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Robert, J L" uniqKey="Robert J">J. L. Robert</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Pikus, G E" uniqKey="Pikus G">G. E. Pikus</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physicotechnical Institute, 194021 St. Petersburg, Russia</s1><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Pikus, F G" uniqKey="Pikus F">F. G. Pikus</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Physics, University of California at Santa Barbara, Santa Barbara, California 93106</s1><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Physics, University of California at Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Iordanskii, S V" uniqKey="Iordanskii S">S. V. Iordanskii</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Landau Institute for Theoretical Physics, 117940 Moscow, Russia</s1><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Landau Institute for Theoretical Physics, 117940 Moscow</wicri:regionArea><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Mosser, V" uniqKey="Mosser V">V. Mosser</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>Schlumberger E. T. L. 50, Avenue Jean Jaures, Boîte Postale 620-05, 92542 Montrouge, France</s1><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Schlumberger E. T. L. 50, Avenue Jean Jaures, Boîte Postale 620-05, 92542 Montrouge</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Montrouge</settlement></placeName></affiliation></author><author><name sortKey="Zekentes, K" uniqKey="Zekentes K">K. Zekentes</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Forth Institute of Electronic Structure and Laser, P.O. Box 1527, Heraklion, 71110 - Crete, Greece</s1><sZ>12 aut.</sZ></inist:fA14><country xml:lang="fr">Grèce</country><wicri:regionArea>Forth Institute of Electronic Structure and Laser, P.O. Box 1527, Heraklion, 71110 - Crete</wicri:regionArea><wicri:noRegion>71110 - Crete</wicri:noRegion></affiliation></author><author><name sortKey="Lyanda Geller, Y B" uniqKey="Lyanda Geller Y">Y. B. Lyanda-Geller</name><affiliation wicri:level="2"><inist:fA14 i1="07"><s1>Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Beckman Institute, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0089274</idno><date when="1996-02-15">1996-02-15</date><idno type="stanalyst">PASCAL 97-0089274 AIP</idno><idno type="RBID">Pascal:97-0089274</idno><idno type="wicri:Area/Main/Corpus">019015</idno><idno type="wicri:Area/Main/Repository">019F34</idno><idno type="wicri:Area/France/Extraction">001E28</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron density</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Magnetoresistance</term><term>Spin orientation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Densité électron</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Magnétorésistance</term><term>Orientation spin</term><term>7220M</term><term>7320F</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The results of magnetoconductivity measurements in Ga<sub>x</sub>In<sub>1-x</sub>As quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)×10<sup>12</sup> cm<sup>-2</sup> ] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in A<sub>3</sub>B<sub>5</sub> crystals and two-dimensional structures. © 1996 The American Physical Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>53</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Weak antilocalization and spin precession in quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>KNAP (W.)</s1></fA11><fA11 i1="02" i2="1"><s1>SKIERBISZEWSKI (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZDUNIAK (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>LITWIN-STASZEWSKA (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>BERTHO (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>KOBBI (F.)</s1></fA11><fA11 i1="07" i2="1"><s1>ROBERT (J. L.)</s1></fA11><fA11 i1="08" i2="1"><s1>PIKUS (G. E.)</s1></fA11><fA11 i1="09" i2="1"><s1>PIKUS (F. G.)</s1></fA11><fA11 i1="10" i2="1"><s1>IORDANSKII (S. V.)</s1></fA11><fA11 i1="11" i2="1"><s1>MOSSER (V.)</s1></fA11><fA11 i1="12" i2="1"><s1>ZEKENTES (K.)</s1></fA11><fA11 i1="13" i2="1"><s1>LYANDA-GELLER (Y. B.)</s1></fA11><fA14 i1="01"><s1>Groupe d′Etude des Semiconducteurs, Universite Montpellier II C.N.R.S. URA 357, Place E. Bataillon, 34095 Montpellier-Cedex 05, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>A. F. Ioffe Physicotechnical Institute, 194021 St. Petersburg, Russia</s1><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, University of California at Santa Barbara, Santa Barbara, California 93106</s1><sZ>9 aut.</sZ></fA14><fA14 i1="04"><s1>Landau Institute for Theoretical Physics, 117940 Moscow, Russia</s1><sZ>10 aut.</sZ></fA14><fA14 i1="05"><s1>Schlumberger E. T. L. 50, Avenue Jean Jaures, Boîte Postale 620-05, 92542 Montrouge, France</s1><sZ>11 aut.</sZ></fA14><fA14 i1="06"><s1>Forth Institute of Electronic Structure and Laser, P.O. Box 1527, Heraklion, 71110 - Crete, Greece</s1><sZ>12 aut.</sZ></fA14><fA14 i1="07"><s1>Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>13 aut.</sZ></fA14><fA20><s1>3912-3924</s1></fA20><fA21><s1>1996-02-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0089274</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The results of magnetoconductivity measurements in Ga<sub>x</sub>In<sub>1-x</sub>As quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)×10<sup>12</sup> cm<sup>-2</sup> ] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in A<sub>3</sub>B<sub>5</sub> crystals and two-dimensional structures. © 1996 The American Physical Society.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B20M</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C20F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Densité électron</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electron density</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Magnétorésistance</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Magnetoresistance</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Orientation spin</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Spin orientation</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7220M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7320F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Etat localisé</s0></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Localized states</s0></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Puits quantique</s0></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Quantum wells</s0></fC07><fN21><s1>229</s1></fN21><fN47 i1="01" i2="1"><s0>9704M01326</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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